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BSC190N15NS3 G
厂牌：Infineon(英飞凌)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051133526
描述：MOSFET N-CH 150V 50A TDSON-8
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
KRHTS8541299000
JPHTS8541290100
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
CAHTS8541290000
Transistor PolarityN-Channel
Id - Continuous Drain Current50 A
ImageInfineon Technologies BSC190N15NS3 G
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance16 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time25 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Package / CaseTDSON-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
ManufacturerInfineon
SeriesOptiMOS 3
MXHTS85412999
TARIC8541290000
RoHS Details
Qg - Gate Charge31 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time6 ns
Unit Weight0.003527 oz
CNHTS8541290000
Part # AliasesSP000416636 BSC19N15NS3GXT BSC190N15NS3GATMA1
Pd - Power Dissipation125 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Rise Time53 ns
TypeOptiMOS 3 Power-Transistor