5-103669-2TEN20-2412WIRTEN30-2412WIMAX660ESA+TDS600U+
在线商城 购物车
DMN65D8LFB-7B

DMN65D8LFB-7B

厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051164926
描述：场效应管(MOSFET) 430mW 60V 260mA 1个N沟道
最新价格近期成交26单+
数量价格（含税）
1¥0.6253
100¥0.4312
500¥0.3922
2500¥0.3634
5000¥0.3389
10000¥0.3111
库存：5交期：3-5Days起订：1增量：1
数量：
X
0.6253（单价）
合计：
￥0.63
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage1.2 V
Transistor PolarityN-Channel
Id - Continuous Drain Current400 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.27 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
RoHS Details
Factory Pack Quantity10000
Rds On - Drain-Source Resistance3 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time12.025 ns
Package / CaseX1-DFN1006-3
BrandDiodes Incorporated
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
ImageDiodes Incorporated DMN65D8LFB-7B
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K
Product TypeMOSFET
Channel ModeEnhancement
Unit Weight0.352740 oz
Fall Time6.29 ns
Pd - Power Dissipation840 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time3.15 ns