在线商城 
SI7101DN-T1-GE3
厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051165505
描述：Trans MOSFET P-CH 30V 16.9A 8-Pin PowerPAK 1212
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min44 S
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current35 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 12 V, + 12 V
JPHTS8541290100
Height1.04 mm
CAHTS8541290000
Length3.3 mm
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
Typical Turn-On Delay Time12 ns
ImageVishay Semiconductors SI7101DN-T1-GE3
Rds On - Drain-Source Resistance7.2 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time38 ns
Maximum Operating Temperature+ 150 C
Package / CasePowerPAK-1212-8
DescriptionMOSFET -30V Vds 25V Vgs PowerPAK 1212-8
PackagingMouseReel
PackagingReel
PackagingCut Tape
Width3.3 mm
Mounting StyleSMD/SMT
TARIC8541290000
BrandVishay Semiconductors
Qg - Gate Charge68 nC
Factory Pack Quantity3000
Product TypeMOSFET
MXHTS85412999
ManufacturerVishay
RoHS Details
SeriesSI7
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time8 ns
CNHTS8541290000
Pd - Power Dissipation52 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time10 ns