参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
Height1.75 mm
CAHTS8541290000
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
ImageVishay Semiconductors SI4634DY-T1-GE3
Rds On - Drain-Source Resistance5.2 mOhms
Maximum Operating Temperature+ 150 C
Package / CaseSO-8
PackagingMouseReel
PackagingReel
PackagingCut Tape
DescriptionMOSFET 30V Vds 20V Vgs SO-8
Width3.9 mm
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerVishay
Product TypeMOSFET
BrandVishay Semiconductors
Qg - Gate Charge68 nC
Factory Pack Quantity2500
MXHTS85412999
RoHS Details
SubcategoryMOSFETs
SeriesSI4
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.006596 oz
CNHTS8541290000
Part # AliasesSI4634DY-GE3
Pd - Power Dissipation5.7 W
TradenameTrenchFET
Number of Channels1 Channel