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IRFBG20PBF
厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051165790
描述：MOSFET N-CH 1000V 1.4A TO-220AB
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min1 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current1.4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.4 ns
Width4.7 mm
Rds On - Drain-Source Resistance11 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time58 ns
Height15.49 mm
Length10.41 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge38 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
CNHTS8541290000
Factory Pack Quantity50
BrandVishay Semiconductors
SeriesIRFBG
Channel ModeEnhancement
Product TypeMOSFET
Product CategoryMOSFET
TARIC8541290000
DescriptionMOSFET RECOMMENDED ALT 844-IRFBF20PBF
ManufacturerVishay
ImageVishay Semiconductors IRFBG20PBF
Fall Time31 ns
RoHS Details
Unit Weight0.211644 oz
SubcategoryMOSFETs
Pd - Power Dissipation54 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage1 kV
Number of Channels1 Channel
Rise Time17 ns