参数项参数值
参数项参数值
DC Current Gain hFE Max250
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max- 65 V
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min125
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000212 oz
RoHS Details
SeriesBC856A
Pd - Power Dissipation200 mW
BrandDiodes Incorporated
ImageDiodes Incorporated BC856AS-7
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT 100mA 65V