参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage160 mV
DC Collector/Base Gain hfe Min100
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
RoHS Details
Unit Weight0.846575 oz
ImageDiodes Incorporated FMMT491QTA
BrandDiodes Incorporated
Pd - Power Dissipation500 mW
Factory Pack Quantity3000
ManufacturerDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT SS Mid-Perf Transistor
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)