参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 6 V, + 6 V
Rds On - Drain-Source Resistance5 Ohms
Width0.76 mm
Height0.8 mm
Length1.575 mm
MXHTS85412101
Qg - Gate Charge750 pC
KRHTS8541219000
Package / CaseSC-75-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
Channel ModeEnhancement
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
Unit Weight0.002234 oz
ImageVishay Semiconductors SI1032R-T1-GE3
SeriesSI1
BrandVishay Semiconductors
Pd - Power Dissipation280 mW
Factory Pack Quantity3000
Part # AliasesSI1032R-GE3
Product TypeMOSFET
ManufacturerVishay
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 20V 200mA 280mW 5.0ohm @ 4.5V
USHTS8541210095
TradenameTrenchFET
Number of Channels1 Channel