SI2374DS-T1-GE3

SI2374DS-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000051166009

描述：Trans MOSFET N-CH 20V 4.5A 3-Pin TO-236 T/R

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

TechnologySi

Vgs th - Gate-Source Threshold Voltage400 mV

Transistor PolarityN-Channel

Id - Continuous Drain Current5.9 A

Vgs - Gate-Source Voltage- 8 V, + 8 V

KRHTS8541299000

Minimum Operating Temperature- 55 C

Length2.9 mm

Height1.45 mm

JPHTS8541290100

Typical Turn-On Delay Time10 ns

CAHTS8541290000

Rds On - Drain-Source Resistance30 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time16 ns

RoHS Details

Package / CaseSOT-23-3

ImageVishay Semiconductors SI2374DS-T1-GE3

Factory Pack Quantity3000

PackagingReel

PackagingCut Tape

PackagingMouseReel

Maximum Operating Temperature+ 150 C

Width1.6 mm

TARIC8541290000

BrandVishay Semiconductors

Mounting StyleSMD/SMT

SubcategoryMOSFETs

Product CategoryMOSFET

ManufacturerVishay

DescriptionMOSFET 20V Vds 8V Vgs SOT-23

Qg - Gate Charge20 nC

MXHTS85412999

SeriesSI2

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.000282 oz

Fall Time10 ns

CNHTS8541290000

Pd - Power Dissipation1.7 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels1 Channel

Rise Time23 ns

Moisture Sensitivity Level1 (Unlimited)