参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT270 MHz
Collector- Base Voltage VCBO45 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO7 V
Width2.6 mm
Height1.6 mm
DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 200 at 1 A, 2 V, 20 at 3.5 A, 2 V
Length4.6 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity1000
BrandDiodes Incorporated
SeriesZXTP25040
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP 40V HIGH GAIN
ManufacturerDiodes Incorporated
TARIC8541290000
ImageDiodes Incorporated ZXTP25040DZTA
Product CategoryBipolar Transistors - BJT
RoHS Details
SubcategoryTransistors
Pd - Power Dissipation4460 mW
USHTS8541290095