参数项参数值
参数项参数值
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.35 V
Width1.4 mm
Height1.1 mm
Length3 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.001058 oz
SeriesFMMT45
ImageDiodes Incorporated FMMT451TA
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Pd - Power Dissipation500 mW
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)