参数项参数值
参数项参数值
DC Current Gain hFE Max100
Gain Bandwidth Product fT110 MHz
Collector- Base Voltage VCBO- 180 V
Maximum DC Collector Current- 10 A
Collector- Emitter Voltage VCEO Max- 140 V
Continuous Collector Current- 4 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
Collector-Emitter Saturation Voltage- 370 mV
Width3.7 mm
Height1.65 mm
Length6.7 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.003880 oz
SeriesFZT955
ImageDiodes Incorporated FZT955TA
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Pd - Power Dissipation3 W
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
USHTS8541290095
DescriptionBipolar Transistors - BJT PNP High Current