SIS413DN-T1-GE3

SIS413DN-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000051166257

描述：Trans MOSFET P-CH 30V 14.7A 8-Pin PowerPAK 1212 T/R

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min50 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current18 A

Transistor PolarityP-Channel

Vgs - Gate-Source Voltage- 10 V, + 10 V

Typical Turn-On Delay Time11 ns, 55 ns

Rds On - Drain-Source Resistance9.4 mOhms

Width3.3 mm

Transistor Type1 P-Channel

Typical Turn-Off Delay Time40 ns, 45 ns

Length3.3 mm

Height1.04 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge73 nC

Package / CasePowerPAK-1212-8

Mounting StyleSMD/SMT

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

PackagingReel

PackagingCut Tape

PackagingMouseReel

CNHTS8541290000

BrandVishay Semiconductors

SeriesSIS

Factory Pack Quantity3000

Product CategoryMOSFET

TARIC8541290000

ManufacturerVishay

Channel ModeEnhancement

Fall Time8 ns

RoHS Details

Product TypeMOSFET

DescriptionMOSFET -30V Vds 20V Vgs PowerPAK 1212-8

ImageVishay Semiconductors SIS413DN-T1-GE3

Unit Weight0.009820 oz

SubcategoryMOSFETs

USHTS8541290095

Pd - Power Dissipation52 W

TradenameTrenchFET, PowerPAK

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time11 ns, 82 ns

Moisture Sensitivity Level1 (Unlimited)