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DMC1229UFDB-7
厂牌：DIODES(美台)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000051166300
描述：场效应管(MOSFET) 1.4W 12V 5.6A；3.8A 1个N沟道+1个P沟道
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min5.5 S, 6.5 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current3.8 A, 5.6 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
KRHTS8541299000
Typical Turn-On Delay Time5 ns, 5.7 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance29 mOhms, 61 mOhms
Typical Turn-Off Delay Time16.6 ns, 27.8 ns
Package / CaseDFN-2020-6
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated DMC1229UFDB-7
SubcategoryMOSFETs
Qg - Gate Charge10.5 nC, 10.7 nC
Product CategoryMOSFET
DescriptionMOSFET Comp ENH Mode FET 12V Vdss 8V VGss
Product TypeMOSFET
MXHTS85412999
SeriesDMC1229
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.687842 oz
Fall Time4.1 ns, 26.4 ns
CNHTS8541290000
Pd - Power Dissipation1.4 W
Vds - Drain-Source Breakdown Voltage12 V
Number of Channels2 Channel
Rise Time10.5 ns, 11.5 ns