参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current19 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Length6.73 mm
Height2.38 mm
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance90 mOhms
RoHS Details
Package / CaseTO-252-3
Factory Pack Quantity2000
ImageVishay Semiconductors SUD19N20-90-E3
BrandVishay Semiconductors
Width6.22 mm
TARIC8541290000
Mounting StyleSMD/SMT
ManufacturerVishay
Maximum Operating Temperature+ 175 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 200V N-CH (D-S) 175 DEG.C
Qg - Gate Charge51 nC
MXHTS85412999
Product TypeMOSFET
SeriesSUD
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.050717 oz
CNHTS8541290000
Pd - Power Dissipation136 W
TradenameTrenchFET
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)