参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 35 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Width1.4 mm
Height1.1 mm
Length3 mm
MXHTS85412999
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.000282 oz
SeriesFMMT54
ImageDiodes Incorporated FMMT549TA
BrandDiodes Incorporated
Pd - Power Dissipation500 mW
ManufacturerDiodes Incorporated
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT PNP Medium Power
USHTS8541210075