参数项参数值
参数项参数值
DC Current Gain hFE Max200
Gain Bandwidth Product fT152 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current5.5 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current- 5.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7.5 V
Width2.6 mm
Height1.6 mm
DC Collector/Base Gain hfe Min200
MXHTS85412999
Length4.6 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageDiodes Incorporated ZX5T3ZTA
TARIC8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
RoHS Details
SeriesZX5T3
SubcategoryTransistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP 40V
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation3000 mW