参数项参数值
参数项参数值
DC Current Gain hFE Max450 at 200 mA, 5 V
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1.25 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current1.25 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage195 mV
DC Collector/Base Gain hfe Min30 at 2 A, 5 V
Width1.4 mm
Height1 mm
Length3.05 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
BrandDiodes Incorporated
Unit Weight0.000282 oz
RoHS Details
SeriesFMMTL
Factory Pack Quantity3000
ImageDiodes Incorporated FMMTL619TA
Pd - Power Dissipation500 mW
Product CategoryBipolar Transistors - BJT
ManufacturerDiodes Incorporated
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
USHTS8541290095