参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current3.9 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.5 ns
Width4 mm
Height1.5 mm
Rds On - Drain-Source Resistance125 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time35 ns
MXHTS85412999
Length5 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge24.2 nC
Mounting StyleSMD/SMT
Package / CaseSO-8
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
ImageDiodes Incorporated ZXMP6A16DN8TA
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity500
Fall Time10 ns
SeriesZXMC6A
SubcategoryMOSFETs
Product CategoryMOSFET
BrandDiodes Incorporated
DescriptionMOSFET Dl 60V P-Chnl UMOS
Unit Weight0.002610 oz
ManufacturerDiodes Incorporated
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation2.15 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time4.1 ns