参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current530 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Height0.6 mm
Length1.6 mm
KRHTS8541219000
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 65 C
JPHTS8541210101
ProductMOSFET Small Signal
RoHS Details
CAHTS8541210000
Rds On - Drain-Source Resistance900 mOhms
Transistor Type2 P-Channel
Package / CaseSOT-563-6
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541210000
Maximum Operating Temperature+ 150 C
Width1.2 mm
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageDiodes Incorporated DMP2004VK-7
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET Dual P-Channel
Product TypeMOSFET
MXHTS85412101
SeriesDMP2004
USHTS8541210095
Channel ModeEnhancement
Unit Weight0.000106 oz
CNHTS8541210000
Pd - Power Dissipation400 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel