参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT160 MHz
Collector- Base Voltage VCBO- 75 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max- 70 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.3 V
Width3.7 mm
Height1.65 mm
Length6.7 mm
DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 250 at 500 mA, 2 V, 200 at 1 A, 2 V
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Factory Pack Quantity1000
CNHTS8541290000
BrandDiodes Incorporated
DescriptionBipolar Transistors - BJT PNP High Gain
ImageDiodes Incorporated FZT792ATA
Product TypeBJTs - Bipolar Transistors
SeriesFZT792
ManufacturerDiodes Incorporated
TARIC8541290000
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.003951 oz
SubcategoryTransistors
Pd - Power Dissipation2 W
USHTS8541290075