参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Rds On - Drain-Source Resistance1.7 Ohms
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge24 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
TARIC8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
BrandVishay Semiconductors
SeriesIRFR/U
RoHS Details
ImageVishay Semiconductors IRFR430ATRPBF
Product CategoryMOSFET
Unit Weight0.050717 oz
SubcategoryMOSFETs
Factory Pack Quantity2000
ManufacturerVishay
Product TypeMOSFET
Pd - Power Dissipation110 W
USHTS8541290095
DescriptionMOSFET 500V N-CH HEXFET D-PAK
Number of Channels1 Channel