参数项参数值
参数项参数值
Forward Transconductance - Min6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.4 V
TechnologySi
Id - Continuous Drain Current300 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Typical Turn-On Delay Time9.86 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
CAHTS8541290000
Rds On - Drain-Source Resistance2.4 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time31.8 ns
Package / CaseSOT-23-3
Factory Pack Quantity3000
BrandDiodes Incorporated
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageDiodes Incorporated DMP32D4S-7
SubcategoryMOSFETs
Qg - Gate Charge1.2 nC
Product CategoryMOSFET
DescriptionMOSFET 30V P-CH ENHANCEMENT 2.4mOhm -10V -300mA
Product TypeMOSFET
MXHTS85412999
SeriesDMP32
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.000282 oz
Fall Time21.9 ns
CNHTS8541290000
Pd - Power Dissipation540 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time11.5 ns