参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412101
Collector-Emitter Saturation Voltage600 mV
DC Collector/Base Gain hfe Min200
KRHTS8541219000
Package / CaseDFN1006-3
CNHTS8541210000
JPHTS8541210101
Mounting StyleSMD/SMT
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated BC847BLP-7B
TARIC8541210000
RoHS Details
Factory Pack Quantity10000
SeriesBC847B
ManufacturerDiodes Incorporated
Unit Weight0.317466 oz
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation250 mW
SubcategoryTransistors
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)