FGH50T65SQD-F155

FGH50T65SQD-F155

厂牌：ON(安森美)

包装：--

类目：元器件 > 分立器件 > IGBT晶体管

编号：B000051168675

描述：IGBT管/模块 650V 268W FS(场截止) 100A

商品参数

参数项参数值

参数项参数值

Gate-Emitter Leakage Current+/- 400 nA

Maximum Gate Emitter Voltage20 V

ConfigurationSingle

Collector- Emitter Voltage VCEO Max650 V

TechnologySi

Collector-Emitter Saturation Voltage1.6 V

Factory Pack Quantity450

Unit Weight0.225401 oz

Mounting StyleThrough Hole

Package / CaseTO-247-3

PackagingTube

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

BrandON Semiconductor / Fairchild

DescriptionIGBT Transistors 650V FS4 Trench IGBT

ImageON Semiconductor / Fairchild FGH50T65SQD-F155

Product TypeIGBT Transistors

SeriesFGH50T65SQD

RoHS Details

ManufacturerON Semiconductor

Product CategoryIGBT Transistors

SubcategoryIGBTs

Continuous Collector Current at 25 C100 A

Pd - Power Dissipation268 W

Continuous Collector Current Ic Max100 A

Part # AliasesFGH50T65SQD_F155