参数项参数值
参数项参数值
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width2.7 mm
Height10.8 mm
Length7.8 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-32-3
Mounting StyleThrough Hole
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingTube
TARIC8541210000
RoHS Details
Unit Weight0.002116 oz
Pd - Power Dissipation1250 mW
ImageSTMicroelectronics BD139-10
SeriesBD139
BrandSTMicroelectronics
Factory Pack Quantity2000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerSTMicroelectronics
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN Silicon Trnsistr
Moisture Sensitivity Level1 (Unlimited)