参数项参数值
参数项参数值
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current2.6 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time5.8 ns
Rds On - Drain-Source Resistance60 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18.3 ns
Minimum Operating Temperature- 55 C
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge5.6 nC
BrandDiodes Incorporated
Factory Pack Quantity3000
ImageDiodes Incorporated DMN3060LW-7
TARIC8541290000
ManufacturerDiodes Incorporated
Product TypeMOSFET
DescriptionMOSFET MOSFET BVDSS: 25V 30V SOT323 T&R 3K
Product CategoryMOSFET
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Pd - Power Dissipation0.5 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time30.8 ns