参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current6 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3 V
Rds On - Drain-Source Resistance490 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time37 ns
MXHTS85412999
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
CNHTS8541290000
KRHTS8541299000
BrandInfineon Technologies
Qg - Gate Charge9 nC
Unit Weight0.011993 oz
Package / CaseTO-252-3
USHTS8541290095
Moisture SensitiveYes
Mounting StyleSMD/SMT
JPHTS8541290100
Channel ModeEnhancement
CAHTS8541290000
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
TARIC8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
RoHS Details
Fall Time7 ns
SeriesCoolMOS P7
ImageInfineon Technologies IPD60R600P7SAUMA1
Product TypeMOSFET
Factory Pack Quantity2500
ManufacturerInfineon
Product CategoryMOSFET
SubcategoryMOSFETs
Pd - Power Dissipation30 W
Part # AliasesIPD60R600P7S SP001658286
DescriptionMOSFET CONSUMER
Vds - Drain-Source Breakdown Voltage600 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time6 ns