参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current800 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4 ns
Width3.7 mm
Rds On - Drain-Source Resistance1.8 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Height1.65 mm
Length6.7 mm
Qg - Gate Charge-
Mounting StyleSMD/SMT
Package / CaseSOT-223-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Factory Pack Quantity1000
BrandDiodes Incorporated
Channel ModeEnhancement
Product CategoryMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET N-Chnl 100V
ImageDiodes Incorporated ZVN4210GTA
Fall Time30 ns
Product TypeMOSFET
RoHS Details
SubcategoryMOSFETs
Unit Weight0.003951 oz
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time8 ns
TypeFET