STB30N65M5

STB30N65M5

厂牌：ST(意法半导体)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000051293019

描述：MOSFET N-CH 650V 22A D2PAK

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

TechnologySi

Vgs th - Gate-Source Threshold Voltage4 V

Transistor PolarityN-Channel

Id - Continuous Drain Current22 A

KRHTS8541299000

Vgs - Gate-Source Voltage- 25 V, + 25 V

Minimum Operating Temperature- 55 C

JPHTS8541290100

CAHTS8541290000

Typical Turn-On Delay Time50 ns

Rds On - Drain-Source Resistance125 mOhms

Transistor Type1 N-Channel

Maximum Operating Temperature+ 150 C

Typical Turn-Off Delay Time50 ns

ImageSTMicroelectronics STB30N65M5

Package / CaseTO-263-3

PackagingCut Tape

PackagingMouseReel

PackagingReel

BrandSTMicroelectronics

SubcategoryMOSFETs

Product CategoryMOSFET

Mounting StyleSMD/SMT

TARIC8541210000

DescriptionMOSFET POWER MOSFET N-CH 650V

ManufacturerSTMicroelectronics

Factory Pack Quantity1000

Qg - Gate Charge64 nC

RoHS Details

MXHTS85412101

SeriesMdmesh M5

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Fall Time10 ns

Unit Weight0.139332 oz

CNHTS8541210000

Pd - Power Dissipation140 W

TradenameMDmesh

Vds - Drain-Source Breakdown Voltage650 V

Number of Channels1 Channel

Rise Time8 ns

TypePower MOSFET