参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage0.5 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current7.1 A
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time140 ns
Rds On - Drain-Source Resistance22 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time434 ns
Minimum Operating Temperature- 55 C
Package / CaseU-DFN2020-6
Mounting StyleSMD/SMT
Qg - Gate Charge0.9 nC
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
BrandDiodes Incorporated
Product CategoryMOSFET
Factory Pack Quantity3000
ImageDiodes Incorporated DMN2024UFDF-7
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET MOSFET BVDSS: 8V-24V
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time245 ns
Unit Weight0.001455 oz
Pd - Power Dissipation1.67 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time1024 ns