参数项参数值
参数项参数值
Forward Transconductance - Min1.6 S
MXHTS85412999
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.65 V
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time5 ns
KRHTS8541299000
Rds On - Drain-Source Resistance2.2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge4.87 nC
Factory Pack Quantity3000
ImageVishay / Siliconix TN2404K-T1-GE3
PackagingReel
PackagingCut Tape
PackagingMouseReel
DescriptionMOSFET 240V 0.2A 0.36W 4.0ohms @ 10V
Product TypeMOSFET
Product CategoryMOSFET
BrandVishay / Siliconix
TARIC8541210000
RoHS Details
SeriesTN2
SubcategoryMOSFETs
ManufacturerVishay
Channel ModeEnhancement
Fall Time16 ns
Unit Weight0.000282 oz
USHTS8541290095
Part # AliasesTN2404K-GE3
Pd - Power Dissipation360 mW
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage257 V
Number of Channels1 Channel
Rise Time12 ns