参数项参数值
参数项参数值
Forward Transconductance - Min200 s
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current110 A
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage3.7 V
Rds On - Drain-Source Resistance4.8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time59 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8.7 ns
Minimum Operating Temperature- 55 C
Height2.3 mm
CAHTS8541290000
Width6.22 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge86 nC
Product CategoryMOSFET
SubcategoryMOSFETs
JPHTS8541290100
Package / CaseTO-252-3
Channel ModeEnhancement
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
CNHTS8541290000
Fall Time32 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.139332 oz
ImageInfineon / IR IRFR7540TRPBF
Factory Pack Quantity2000
Product TypeMOSFET
Pd - Power Dissipation140 W
ManufacturerInfineon
BrandInfineon / IR
DescriptionMOSFET 60V StrongIRFET Power Mosfet
Vds - Drain-Source Breakdown Voltage60 V
TradenameStrongIRFET
USHTS8541290095
Number of Channels1 Channel
Rise Time38 ns