参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage400 mV
TechnologySi
Transistor PolarityN-Channel, P-Channel
MXHTS85412999
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time5 ns, 11 ns
KRHTS8541299000
Rds On - Drain-Source Resistance35 mOhms, 74 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time25 ns, 21 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
Package / CaseTSOT-26-6
CAHTS8541290000
CNHTS8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Qg - Gate Charge12 nC, 14 nC
Factory Pack Quantity3000
ImageDiodes Incorporated DMC2038LVT-7
PackagingReel
PackagingCut Tape
PackagingMouseReel
Product TypeMOSFET
BrandDiodes Incorporated
DescriptionMOSFET MOSFET BVDSS: 8V-24V 8V-24V,TSOT23,3K
TARIC8541290000
Product CategoryMOSFET
RoHS Details
SeriesDMC2038
SubcategoryMOSFETs
ManufacturerDiodes Incorporated
Channel ModeEnhancement
Fall Time8 ns, 13 ns
Unit Weight1.375685 oz
USHTS8541290095
Pd - Power Dissipation1.1 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time8 ns, 12 ns