SI2333CDS-T1-GE3

厂牌:VISHAY(威世)
包装:--
类目:元器件 > 分立器件 > MOSFET
编号:B000051364970
描述:MOSFET P-CH D-S 12V SOT-23MOSFET 12V 5.1A 2.5W 35 mohms @ 4.5VMOSFET 12V 5.1A 2.5W 35 mohms @ 4.5V
最新价格近期成交15单+
数量价格(含税)
1¥3.5666
100¥2.9778
750¥2.7444
1500¥2.6223
3000¥2.5110
库存:2交期:3-5Days起订:1增量:1
数量:
X
3.5666(单价)
合计:
¥3.57
商品满500包邮
商品参数
参数项参数值
参数项参数值
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C7.1A (Tc)
Rds On (Max) @ Id, Vgs35mOhm @ 5.1A, 4.5V
FET Feature-
Power Dissipation (Max)1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1225 pF @ 6 V