IPB036N12N3GATMA1

厂牌：Infineon(英飞凌)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000051365155

描述：Trans MOSFET N-CH 120V 180A Automotive 7-Pin(6+Tab) D2PAK T/R

商品参数

参数项参数值

Forward Transconductance - Min98 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Id - Continuous Drain Current180 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time35 ns

Rds On - Drain-Source Resistance2.9 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time76 ns

Width9.25 mm

Height4.4 mm

MXHTS85412999

Length10 mm

CNHTS8541290000

KRHTS8541299000

Qg - Gate Charge211 nC

Package / CaseTO-263-7

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 175 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

Channel ModeEnhancement

Fall Time21 ns

TARIC8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

BrandInfineon Technologies

RoHS Details

Product CategoryMOSFET

ImageInfineon Technologies IPB036N12N3GATMA1

SeriesOptiMOS 3

Unit Weight0.063846 oz

SubcategoryMOSFETs

Factory Pack Quantity1000

ManufacturerInfineon

Product TypeMOSFET

Pd - Power Dissipation300 W

Part # AliasesIPB036N12N3 G SP000675204

USHTS8541290095

DescriptionMOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3

Vds - Drain-Source Breakdown Voltage120 V

TradenameOptiMOS

Number of Channels1 Channel

Rise Time52 ns