参数项参数值
参数项参数值
DC Current Gain hFE Max120 at 100 mA, 2 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current- 2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min120
Width1.6 mm
Height0.85 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Package / CaseTSMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageROHM Semiconductor 2SA2094TLQ
TARIC8541290000
RoHS Details
Series2SA2094
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation500 mW
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT TRANS GP BJT PNP 60V 2A 3PIN
USHTS8541290095