参数项参数值
参数项参数值
Gain Bandwidth Product fT75 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max60 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min75 at 50 mA, 2 V
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 65 C
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.003951 oz
Pd - Power Dissipation800 mW
SeriesPZT751
BrandON Semiconductor
ImageON Semiconductor SPZT751T1G
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
SubcategoryTransistors
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
USHTS8541290095
DescriptionBipolar Transistors - BJT High Current PNP Bipolar Transistor