参数项参数值
参数项参数值
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max60 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Width1.26 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
CNHTS8541210000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZUMT591
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP Medium Power
TARIC8541210000
ManufacturerDiodes Incorporated
ImageDiodes Incorporated ZUMT591TA
RoHS Details
Unit Weight0.000176 oz
SubcategoryTransistors
Pd - Power Dissipation500 mW
USHTS8541210095