参数项参数值
参数项参数值
DC Current Gain hFE Max63 at 150 mA, 2 V
Gain Bandwidth Product fT145 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min63 at 150 mA, 2 V
Width2.6 mm
Height1.6 mm
Length4.6 mm
MXHTS85412101
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.004603 oz
RoHS Details
Pd - Power Dissipation1300 mW
Part # Aliases933663060115
BrandNexperia
ImageNexperia BCX53-10,115
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity1000
SubcategoryTransistors
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
USHTS8541290075
DescriptionBipolar Transistors - BJT TRANS MED PWR TAPE-7
Moisture Sensitivity Level1 (Unlimited)