参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO- 120 V
Maximum DC Collector Current0.05 A
Collector- Emitter Voltage VCEO Max- 120 V
Continuous Collector Current- 50 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.5 V
DC Collector/Base Gain hfe Min180
Width1.25 mm
Height0.8 mm
Length2 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
ImageROHM Semiconductor 2SA1579T106R
RoHS Details
Unit Weight0.000176 oz
Series2SA1579
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP 120V 50MA
ManufacturerROHM Semiconductor
USHTS8541290095