参数项参数值
参数项参数值
DC Current Gain hFE Max700
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 120 V
Maximum DC Collector Current- 100 mA
Collector- Emitter Voltage VCEO Max- 120 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.3 V
MXHTS85412101
DC Collector/Base Gain hfe Min200
KRHTS8541219000
CNHTS8541210000
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541210000
Series2SA1312
BrandToshiba
RoHS Details
ImageToshiba 2SA1312-BL(TE85L,F
Product CategoryBipolar Transistors - BJT
Unit Weight0.000423 oz
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerToshiba
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
USHTS8541210075
DescriptionBipolar Transistors - BJT PNP Trans -0.1A LN -120V VCEO