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BSC060N10NS3G
厂牌：Infineon(英飞凌)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051379148
描述：MOSFET N-CH 100V 90A TDSON-8
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min43 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current90 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Width5.15 mm
Rds On - Drain-Source Resistance5.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
Height1.27 mm
Length5.9 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge68 nC
Mounting StyleSMD/SMT
Package / CaseTDSON-8
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity5000
BrandInfineon Technologies
SeriesOptiMOS 3
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
ManufacturerInfineon
TARIC8541290000
ImageInfineon Technologies BSC060N10NS3 G
Product CategoryMOSFET
Fall Time12 ns
RoHS Details
Unit Weight0.003527 oz
SubcategoryMOSFETs
Part # AliasesBSC6N1NS3GXT SP000446584 BSC060N10NS3GATMA1
Pd - Power Dissipation125 W
USHTS8541290095
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time16 ns