参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage400 mV
TechnologySi
Id - Continuous Drain Current900 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time9.8 ns
Rds On - Drain-Source Resistance260 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time24.4 ns
MXHTS85412101
Qg - Gate Charge2.1 nC
KRHTS8541219000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
Channel ModeEnhancement
Fall Time45 ns
CNHTS8541210000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Unit Weight0.000265 oz
ImageDiodes Incorporated DMP2200UDW-7
TARIC8541210000
Pd - Power Dissipation600 mW
RoHS Details
Factory Pack Quantity3000
SeriesDMP2200
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Vds - Drain-Source Breakdown Voltage20 V
Product TypeMOSFET
Number of Channels2 Channel
DescriptionMOSFET Dual -20V P-Ch FET 260mOhm -4.5V -0.9A
SubcategoryMOSFETs
Rise Time88 ns
USHTS8541210095