DMG6602SVTQ-7

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000051379177

描述：Trans MOSFET N/P-CH 30V 3.4A/2.8A Automotive 6-Pin TSOT-26 T/R

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商品参数

参数项参数值

Forward Transconductance - Min4 S, 6 S

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage1 V, 2.3 V

TechnologySi

Transistor PolarityN-Channel, P-Channel

Id - Continuous Drain Current3.4 A, 2.8 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

Typical Turn-On Delay Time3 ns, 4.8 ns

MXHTS85412101

CNHTS8541290000

Rds On - Drain-Source Resistance100 mOhms, 140 mOhms

KRHTS8541219000

Typical Turn-Off Delay Time13 ns, 20 ns

Minimum Operating Temperature- 55 C

JPHTS8541210101

CAHTS8541210000

Mounting StyleSMD/SMT

Package / CaseTSOT-26-6

PackagingReel

PackagingCut Tape

PackagingMouseReel

Qg - Gate Charge9 nC, 7 nC

Maximum Operating Temperature+ 150 C

BrandDiodes Incorporated

ManufacturerDiodes Incorporated

TARIC8541210000

RoHS Details

SubcategoryMOSFETs

ImageDiodes Incorporated DMG6602SVTQ-7

Factory Pack Quantity3000

SeriesDMG6602

Product CategoryMOSFET

Product TypeMOSFET

DescriptionMOSFET 30V Vds 20V Vgs Complmtry Enh FET

Channel ModeEnhancement

Fall Time3 ns, 13 ns

USHTS8541210095

Unit Weight0.002687 oz

Pd - Power Dissipation1.27 W

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels2 Channel

Rise Time5 ns, 7.3 ns

Moisture Sensitivity Level1 (Unlimited)