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BSC039N06NS
厂牌：Infineon(英飞凌)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000051379215
描述：Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min42 S
KRHTS8541299000
JPHTS8541290100
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
CAHTS8541290000
Transistor PolarityN-Channel
Id - Continuous Drain Current100 A
ImageInfineon Technologies BSC039N06NS
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 20 V, + 20 V
DescriptionMOSFET N-Ch 60V 100A TDSON-8
Height1.27 mm
Length5.9 mm
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance3.9 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
PackagingReel
PackagingCut Tape
PackagingMouseReel
Package / CaseTDSON-8
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
Factory Pack Quantity5000
Width5.15 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
ManufacturerInfineon
SeriesOptiMOS 5
MXHTS85412999
TARIC8541290000
RoHS Details
Qg - Gate Charge27 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time7 ns
Unit Weight0.004171 oz
CNHTS8541290000
Part # AliasesBSC39N6NSXT SP000985386 BSC039N06NSATMA1
Pd - Power Dissipation69 W
TradenameOptiMOS
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time12 ns