参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage450 mV
TechnologySi
Id - Continuous Drain Current2.11 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time3.5 ns
Transistor Type2 N-Channel
Typical Turn-Off Delay Time38 ns
MXHTS85412101
Qg - Gate Charge1.6 nC
KRHTS8541219000
Package / CaseX2-DFN1310-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541210000
Fall Time13 ns
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000028 oz
RoHS Details
Pd - Power Dissipation530 mW
SeriesDMN23
ImageDiodes Incorporated DMN2300UFL4-7
BrandDiodes Incorporated
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerDiodes Incorporated
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time2.8 ns
USHTS8541210095
DescriptionMOSFET 20V Dual N-Ch Enh 200mOhm 8V VGSS