参数项参数值
参数项参数值
DC Current Gain hFE Max390
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO60 V
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage400 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseEMT-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageROHM Semiconductor 2SC4617EBTLR
TARIC8541290000
RoHS Details
Series2SC4617
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT Trans GP BJT NPN 50V 0.15A
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)