BCP51TA

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > 双极晶体管

编号：B000051379317

描述：Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K

商品参数

参数项参数值

DC Current Gain hFE Max40

Gain Bandwidth Product fT125 MHz

Collector- Base Voltage VCBO45 V

Maximum DC Collector Current1 A

Collector- Emitter Voltage VCEO Max45 V

ConfigurationSingle

TechnologySi

Transistor PolarityPNP

Emitter- Base Voltage VEBO5 V

DC Collector/Base Gain hfe Min25 at 5 mA, 2 V, 40 at 150 mA, 2 V, 25 at 500 mA, 2 V

Width3.7 mm

Height1.65 mm

Length6.7 mm

MXHTS85412999

KRHTS8541299000

Package / CaseSOT-223-4

Mounting StyleSMD/SMT

JPHTS8541290100

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541290000

CNHTS8541290000

PackagingReel

PackagingCut Tape

PackagingMouseReel

TARIC8541290000

Unit Weight0.003951 oz

RoHS Details

SeriesBCP51

Pd - Power Dissipation2000 mW

BrandDiodes Incorporated

ImageDiodes Incorporated BCP51TA

Product TypeBJTs - Bipolar Transistors

SubcategoryTransistors

Factory Pack Quantity1000

ManufacturerDiodes Incorporated

Product CategoryBipolar Transistors - BJT

USHTS8541290095

DescriptionBipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K