参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current2.3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85423901
Typical Turn-On Delay Time2.6 ns
CNHTS8541210000
Rds On - Drain-Source Resistance140 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time16.3 ns
Minimum Operating Temperature- 55 C
JPHTS8542390990
CAHTS8542390000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Qg - Gate Charge8.6 nC
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
BrandDiodes Incorporated
Factory Pack Quantity10000
Product CategoryMOSFET
ImageDiodes Incorporated DMN6140L-13
TARIC8542399000
SeriesDMN614
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET 31V to 99V N-Ch FET 60Vds 20Vgs 2.3A
SubcategoryMOSFETs
Channel ModeEnhancement
Unit Weight0.001623 oz
USHTS8542390001
Pd - Power Dissipation1.3 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time3.6 ns